Document Details

Document Type : Article In Journal 
Document Title :
Electrical characterization of p-type 4H Silicon carbide metal contacts
الوصف الكهربائيّ لمعدن كربيد السليكون ال4ه من نوع بنس اتّصالات
 
Subject : Electrical characterization of p-type 4H Silicon carbide metal contacts 
Document Language : English 
Abstract : Silicon Carbide (SIC) is very important subject for the industrial applications. It has wide band gap structure, so it can be used for high power or high frequency applications. This work concentrates n using gold (Au) and chromium (Cr) as metal contact on single crystal silicon carbide( 4H-SIC ) This type of SIC showed low mobility anisotropy , but high electron mobility. Thermal evaporation has been used to deposit gold or chromium metals with purity of 99.99% on top of the SiC wafer to form a contact area . The contact area had diameter ranging from 1 to 2 mm. The electrical measurements of the junction were obtained, and used to characterize the current -voltage behavior as welt as capacitance-voltage. These measurements were enabling us to study the barrier height doping concentration, as well as the deep levels of the device near the surface. 
ISSN : 0973-3469 
Journal Name : Materials Science Research India 
Volume : 4 
Issue Number : 2 
Publishing Year : 1428 AH
2007 AD 
Article Type : Article 
Added Date : Monday, February 25, 2013 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
سعيد سعد الاميرalamir, said saadResearcherDoctoratessaameer@yahoo.com

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