Document Details

Document Type : Article In Journal 
Document Title :
EXPERIMENTAL STUDY OF THE IV CHARACTERISTIC OF GAN- METAL CONTACT
الدّراسة التّجريبيّة لسمة إيف لجان في اتّصال المعدن
 
Subject : EXPERIMENTAL STUDY OF THE IV CHARACTERISTIC OF GAN- METAL CONTACT 
Document Language : English 
Abstract : Wide band gap Gallium Nitride (GaN) is the most promising of the next generation semiconductor materials. It shows an excellent and high potential for a large range of technological applications in which the classical semiconductors, such as Si and GaAs, are unable to fulfill the needs of the advancing technology. In this work GaN prepared by the metal organià chemical-vapor deposition (MOCVD) techniques was used. This technique is capable of producing high quality films. However, the quality is still variable and dependant on the deposition parameters such as the substrate material, temperature souites, carrier gas pressures and other reactor conditions. 
ISSN : 1461-3840 
Journal Name : OXFORD RESEARCH FORUM JOURNAL 
Volume : 2 
Issue Number : 3 
Publishing Year : 1427 AH
2006 AD 
Article Type : Article 
Added Date : Monday, February 25, 2013 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
سعيد سعد الاميرalamir, said saadInvestigatorDoctoratessaameer@yahoo.com

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